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MT28EW01GABA - Parallel NOR Flash Embedded Memory

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Micron Technology

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MT28EW01GABA Parallel NOR Flash Embedded Memory by Micron Technology - Datasheet Preview — Datasheet preview – MT28EW01GABA

Datasheet Details

Part number	MT28EW01GABA
Manufacturer	Micron Technology
File Size	968.44 KB
Description	Parallel NOR Flash Embedded Memory
Datasheet	MT28EW01GABA Datasheet
Additional preview pages of the MT28EW01GABA datasheet.

Product details

Features

Parallel NOR Flash Embedded Memory MT28EW01GABA Features.
Single-level cell (SLC) process technology.
Density: 1Gb.
Supply voltage.
VCC = 2.7.
3.6V (program, erase, read).
VCCQ = 1.65 - VCC (I/O buffers).
Asynchronous random/page read.
Page size: 16 words or 32 bytes.
Page access: 20ns.
Random access: 95ns (VCC = VCCQ = 2.7-3.6V).
Random access: 100ns (VCCQ = 1.65-VCC).
Buffer program (512-.

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Published: Dec 15, 2017 |