MSCGLQ25X120CRTBL3NG Datasheet (Microchip)

MSCGLQ25X120CRTBL3NG, Power Module

Three-Phase Bridge High-Speed IGBT 4 Power Module MSCGLQ25X120CRTBL3NG Product Overview The MSCGLQ25X120CRTBL3NG device is a three-phase bridge high-speed 1200V, 25A Insulated-Gate Bipolar Transistor (IGBT) 4 power module.

The following figures show the electrical diagram and pinout location of the device.

Figure 1.

Electrical Diagram Figure 2.

Pinout Location Note: All ratings are at TJ = 25 °C, unless otherwise specified.

CAUTION These devices are sensitive to electrostatic discharge.

Proper

MSCGLQ25X120CRTBL3NG Features

* The MSCGLQ25X120CRTBL3NG device has the following key features:

* High-Speed IGBT 4

* Low voltage drop

* Low leakage current

* Low switching losses

* Silicon Carbide (SiC) Schottky Diode

* Zero reverse recovery

* Zero forward recovery