MMA041PP5 Datasheet (Microchip) - GaAs MMIC Distributed LNA

MMA041PP5, GaAs MMIC Distributed LNA

MMA041PP5 DC 25 GHz GaAs MMIC Distributed LNA Product Overview MMA041PP5 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) pseudomorphic highelectron-mobility transistor (pHEMT) distributed low noise amplifier in a leadless 5 mm × 5 mm surface-mount package that operates between DC and 25 GHz.

It is ideal for test instrumentation, wideband military and space applications.

The amplifier provides a flat gain of 17 dB, 2.5 dB noise figure, and 21 dBm of output

MMA041PP5 Features

* RF I/Os that are internally matched to 50 Ω. It is also available in die form as the MMA041AA. Key Features Amplifier Functional Diagram

* Broadband performance: DC to 26 GHz

* High gain: 18.5 dB

* Low noise figure: 3.2 dB

* High output IP3: + 36 dBm

* Posi