Description
A0 - A19 DQ0 - DQ7 CE WE OE VCC GND NC - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Power (+5V) - Ground - No Connect
DESCRIPTION
The DS1265 8M Nonvolatile SRAMs are 8,388,608-bit, fully static nonvolatile SRAMs organized as 1,048,576 words by 8 bits.Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition.When such a condition occurs, the lithium energy source is automat
Features
- 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time Full ±10% VCC operating range (DS1265Y) Optional ±5% VCC operating range (DS1265AB) Optional industrial temperature range of.