DS1265W - 3.3V 8Mb Nonvolatile SRAM

Dallas Semiconducotr

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Datasheet Details

Part number	DS1265W
Manufacturer	Dallas Semiconducotr
File Size	155.91 KB
Description	3.3V 8Mb Nonvolatile SRAM
Datasheet	DS1265W_DallasSemiconducotr.pdf

DS1265W Product details

Description

A0 A19 DQ0 DQ7 CE WE OE VCC GND NC - Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Power (+3.3V) - Ground - No Connect DESCRIPTION The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as 1,048,576 words by 8 bits.Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition.When such a condition occurs, the lithium energy sou

Features

10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 100ns Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time Optional industrial (IND) temperature range of -40°C to +85°C PIN.

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Published: Sep 23, 2005 |