Datasheet Details
Part number:
ME8117-G, ME8117
Manufacturer:
Matsuki
File Size:
1.03 MB
Description:
P-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: ME8117-G, ME8117.
Please refer to the document for exact specifications by model.
The ME8117 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as
ME8117-G Features
* RDS(ON)≦5.2mΩ@VGS=-10V
* RDS(ON)≦9.5mΩ@VGS=-4V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC
ME8117-G Distributor
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