ME6986ED-G - Dual N-Channel MOSFET

Product Overview

Matsuki

Datasheet Details

Part number	ME6986ED-G
Manufacturer	Matsuki
File Size	795.29 KB
Description	Dual N-Channel MOSFET
Datasheet	ME6986ED-G Datasheet
Note	This datasheet PDF includes multiple part numbers: ME6986ED-G, ME6986ED. Please refer to the document for exact specifications by model.
Additional preview pages of the ME6986ED-G datasheet.

Product details

Description

The ME6986ED is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦13.5mΩ@VGS=4.5V.
RDS(ON)≦18mΩ@VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

📁 Similar Datasheet

ME600815 - Three-Phase Diode Bridge Modules (150 Amperes/800 Volts) (Powerex Powers)
ME601215 - Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) (Powerex Powers)
ME601615 - Three-Phase Diode Bridge Modules (150 Amperes/1200-1600 Volts) (Powerex Powers)
ME6118 - 1A Adjustable Voltage High Speed LDO Regulators (ChipSourceTek)
ME6119 - 400mA Adjustable Voltage High Speed LDO Regulators (Microne)
ME6201 - low-dropout linear voltage regulators (Microne)
ME6203 - High Input Voltage LDO Linear Regulators (YUSHIN)
ME6206 - positive voltage regulators (Microne)

Other Datasheets by Matsuki

ME6986ED - Dual N-Channel MOSFET
ME6980ED - Dual N-Channel MOSFET
ME6980ED-G - Dual N-Channel MOSFET
ME6982ED - Dual N-Channel MOSFET
ME6982ED-G - Dual N-Channel MOSFET
ME6987-G - Dual P-Channel MOSFET

Published: Mar 22, 2018 |