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ME4970A-G - Dual N-Channel MOSFET

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Matsuki

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ME4970A-G Dual N-Channel MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME4970A-G

Datasheet Details

Part number	ME4970A-G
Manufacturer	Matsuki
File Size	970.13 KB
Description	Dual N-Channel MOSFET
Datasheet	ME4970A-G Datasheet
Note	This datasheet PDF includes multiple part numbers: ME4970A-G, ME4970A. Please refer to the document for exact specifications by model.
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Product details

Description

The ME4970A-G is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density,

Features

RDS(ON)≦14mΩ@VGS=10V.
RDS(ON)≦20mΩ@VGS=4.5V DMOS trench technology. This high density process is especially.
Super high density cell design for extremely low RDS(ON) tailored to minimize on-state resistance. These devices are.
Exceptional on-resistance and maximum DC current particularly suited for low voltage.

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Published: Mar 22, 2018 |