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Dual N-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4920 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
ME4920/ME4920-G
FEATURES
● RDS(ON)≦35 mΩ@VGS=10V ● RDS(ON)≦45 mΩ@VGS=4.
ME4920 Datasheet
