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ME4812B-G - N-Channel 30-V(D-S) MOSFET

Product Overview

Matsuki

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ME4812B-G N-Channel 30-V(D-S) MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME4812B-G

Datasheet Details

Part number	ME4812B-G
Manufacturer	Matsuki
File Size	636.19 KB
Description	N-Channel 30-V(D-S) MOSFET
Datasheet	ME4812B-G Datasheet
Note	This datasheet PDF includes multiple part numbers: ME4812B-G, ME4812BB. Please refer to the document for exact specifications by model.
Additional preview pages of the ME4812B-G datasheet.

Product details

Description

The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦12mΩ@VGS=10V.
RDS(ON)≦21mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Jan 31, 2017 |