ME4812 Datasheet (Matsuki) - N-Channel 30-V(D-S) MOSFET

ME4812, N-Channel 30-V(D-S) MOSFET

The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology integrated Schottky diode.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low v

ME4812 Features

* Integrated Schottky diode

* RDS(ON)≦13mΩ@VGS=10V

* RDS(ON)≦21.5mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* Battery Powered System