ME3466-G Datasheet (Matsuki) - N-Channel 150V (D-S) MOSFET

ME3466-G, N-Channel 150V (D-S) MOSFET

The ME3466-G is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular p

ME3466-G Features

* FEATURES

* RDS(ON)≦375mΩ@ VGS =10V

* RDS(ON)≦400mΩ@ VGS= 6V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management in Note book

* DC/DC Converter

* Load Switch

* LCD Disp