ME3205F Datasheet (Matsuki) - N-Channel MOSFET

ME3205F, N-Channel MOSFET

The ME3205F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as

ME3205F Features

* RDS(ON)≦6mΩ@VGS=10V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability APPLICATIONS

* Power Management

* DC/DC Converter

* TheOrdering Information: ME3205F (Pb-free) ME4 ME3205F-G (Green product-Haloge