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ME2317D-G - P-Channel 30V (D-S) MOSFET

Product Overview

Matsuki

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ME2317D-G P-Channel 30V (D-S) MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME2317D-G

Datasheet Details

Part number	ME2317D-G
Manufacturer	Matsuki
File Size	958.44 KB
Description	P-Channel 30V (D-S) MOSFET
Datasheet	ME2317D-G Datasheet
Additional preview pages of the ME2317D-G datasheet.

Product details

Description

The ME2317D-G is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

RDS(ON) ≦45mΩ@VGS=-10V.
RDS(ON) ≦53mΩ@VGS=-4.5V.
RDS(ON) ≦80mΩ@VGS=-2.5V.
Typical ESD performance 3KV.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2018 |