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ME2313-G - P-Channel 20V (D-S) MOSFET

Product Overview

Matsuki

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ME2313-G P-Channel 20V (D-S) MOSFET by Matsuki - Datasheet Preview — Datasheet preview – ME2313-G

Datasheet Details

Part number	ME2313-G
Manufacturer	Matsuki
File Size	393.94 KB
Description	P-Channel 20V (D-S) MOSFET
Datasheet	ME2313-G Datasheet
Note	This datasheet PDF includes multiple part numbers: ME2313-G, ME2313. Please refer to the document for exact specifications by model.
Additional preview pages of the ME2313-G datasheet.

Product details

Description

The ME2313 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

Features

RDS(ON)≦48mΩ@VGS=-10V.
RDS(ON)≦52mΩ@VGS=-4.5V.
RDS(ON)≦65mΩ@VGS=-2.5V.
RDS(ON)≦85mΩ@VGS=-1.8V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Other Datasheets by Matsuki

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ME2312-G - N-Channel 20V (D-S) MOSFET
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Published: Mar 20, 2018 |