ME2306AS - N-Channel 30V (D-S) MOSFET

Matsuki

The ME2306AS by Matsuki is a N-Channel 30V (D-S) MOSFET. Below is the official datasheet preview.

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ME2306AS N-Channel 30V (D-S) MOSFET by Matsuki - Datasheet Preview — Official preview page of the **ME2306AS** N-Channel 30V (D-S) MOSFET datasheet (Matsuki).

Datasheet Details

Part number	ME2306AS
Manufacturer	Matsuki
File Size	1.01 MB
Description	N-Channel 30V (D-S) MOSFET
Datasheet	ME2306AS-Matsuki.pdf
Additional preview pages of the ME2306AS datasheet.

ME2306AS Product details

Description

The ME2306AS is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package.

Features

RDS(ON)≦32mΩ@VGS=10V.
RDS(ON)≦38mΩ@VGS=4.5V.
RDS(ON)≦50mΩ@VGS=2.5V.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2018 |