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ME2306-G - N-Channel Enhancement Mode Mosfet

Download the ME2306-G datasheet PDF. This datasheet also covers the ME2306 variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON)≦37mΩ@VGS=10V.
  • RDS(ON)≦49mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability PIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME2306-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME2306-G
Manufacturer Matsuki
File Size 1.02 MB
Description N-Channel Enhancement Mode Mosfet
Datasheet download datasheet ME2306-G Datasheet

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Other Datasheets by Matsuki

Part Number Description
ME2306 N-Channel Enhancement Mode Mosfet
ME2306A N-Channel 30V (D-S) MOSFET
ME2306A-G N-Channel 30V (D-S) MOSFET
ME2306AS N-Channel 30V (D-S) MOSFET
ME2306AS-G N-Channel 30V (D-S) MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION The ME2306 is the N-Channel logic enhancement mode power field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. ME2306/ME2306-G FEATURES ● RDS(ON)≦37mΩ@VGS=10V ● RDS(ON)≦49mΩ@VGS=4.