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ME2301DC-G - P-Channel 20V (D-S) MOSFET

Download the ME2301DC-G datasheet PDF. This datasheet also covers the ME2301DC variant, as both devices belong to the same p-channel 20v (d-s) mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The ME2301DC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.5V Super high density cell design for extremely low RDS(ON).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ME2301DC-Matsuki.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ME2301DC-G
Manufacturer Matsuki
File Size 732.65 KB
Description P-Channel 20V (D-S) MOSFET
Datasheet download datasheet ME2301DC-G Datasheet

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Other Datasheets by Matsuki

Part Number Description
ME2301DC P-Channel 20V (D-S) MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION The ME2301DC is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where low in-line power loss are needed in a very small outline surface mount package. FEATURES RDS(ON) 110mΩ@VGS=-4.5V RDS(ON) 150mΩ@VGS=-2.
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