SLW80R500SJ Datasheet (Maple Semiconductor)

SLW80R500SJ, N-Channel MOSFET

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SLW80R500SJ Features

* -11A, 800V, RDS(on) typ.= 0.46Ω@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 13nC) D G D S TO-247 G D S TO-3P G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLH80R500SJ/SLW8