SLW60R070SJ Datasheet (Maple Semiconductor)

SLW60R070SJ, N-Channel MOSFET

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction This advanced technology theacsh *nb7Lo.oe6wlAeo,gng5a0ytee0.

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i=cat0al .5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching perfo

SLW60R070SJ Features

* -47A, 600V, RDS(on) typ.= 60mΩ@VGS = 10 V - Low gate charge ( typical - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability 170nC) D TO‐247 TO‐3P G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID