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SLF60R650SJ - N-Channel MOSFET

Description

This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology.

This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • - 7A, 600V, RDS(on) typ. = 0.58Ω@VGS = 10 V - Low gate charge ( typical 25nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLP60R650SJ SLF60R650SJ VDSS ID IDM VGSS Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed Gate-Source Voltage (Note 1) 600 7 7.
  • 5 5.
  • 10 10.
  • ±30.

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Datasheet Details

Part number SLF60R650SJ
Manufacturer Maple Semiconductor
File Size 766.51 KB
Description N-Channel MOSFET
Datasheet download datasheet SLF60R650SJ Datasheet

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Full PDF Text Transcription

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SLP60R650SJ/SLF60R650SJ SLP60R650SJ/SLF60R650SJ 600V N-Channel MOSFET CB-FET General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for AC/DC power conversion in switching mode operation for higher efficiency. Features - 7A, 600V, RDS(on) typ. = 0.
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