SLF60R080SS - 600V N-Channel MOSFET

Maple Semiconductor

The SLF60R080SS by Maple Semiconductor is a 600V N-Channel MOSFET. Below is the official datasheet preview.

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SLF60R080SS 600V N-Channel MOSFET by Maple Semiconductor - Datasheet Preview — Official preview page of the **SLF60R080SS** 600V N-Channel MOSFET datasheet (Maple Semiconductor).

Datasheet Details

Part number	SLF60R080SS
Manufacturer	Maple Semiconductor
File Size	515.37 KB
Description	600V N-Channel MOSFET
Datasheet	SLF60R080SS-MapleSemiconductor.pdf
Additional preview pages of the SLF60R080SS datasheet.

SLF60R080SS Product details

Description

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology.This advanced technology has--b7L.oe6wAe,gn5a0tee0Vsch,paRerDgcSe(oi(na)ttylylppy.i=cat0al.5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, and withstand hig- Fhaset nsweitrcghiyngpulse in the avalanche and commutation m--oI1md0p0er%o.vaevdadlavn/dcht ecatpeastbeildity These devices are well suited for AC/DC power conversion GD S TO-220F SLF60R

Features

- 47A, 600V, RDS(on) typ. = 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single.

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Published: Dec 28, 2018 |