SLF60R080SS Datasheet (Maple Semiconductor)

SLF60R080SS, 600V N-Channel MOSFET

This Power MOSFET is producFeeadtuurseisng Maple semi‘s Advanced Super-Junction technology.

This advanced technology has *b7L.oe6wAe,gn5a0tee0Vsch,paRerDgcSe(oi(na)ttylylppy.i=cat0al.5i2lΩo5@nrCeV)dGS = 10 V to minimize conduction loss, pr-oHvigihdreugsguedpneesrsior switching performance, an

SLF60R080SS Features

* - 47A, 600V, RDS(on) typ.= 68mΩ@VGS =10 V - Low gate charge ( typical 88nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Con