MDU5512 - Dual N-Channel Trench MOSFET

Product Overview

MagnaChip

Datasheet Details

Part number	MDU5512
Manufacturer	MagnaChip
File Size	1.42 MB
Description	Dual N-Channel Trench MOSFET
Datasheet	MDU5512 Datasheet
Additional preview pages of the MDU5512 datasheet.

Product details

Description

The MDU5512 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

Features

FET1 FET2  VDS = 30V  ID = 46.1A VDS = 30V ID = 80A @VGS = 10V  RDS(ON) < 8.9mΩ < 12.5mΩ < 3.6mΩ @VGS = 10V < 4.5mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 5 S1/D2 S2 6 S2 S2 7 G2 8 4 1 D1 3 D1 2 D1 1 G1 Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range TC=25oC TC=100oC TA=25o.

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Published: Apr 10, 2017 |