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MDU5693 - Dual N-Channel MOSFET

Description

The MDU5693 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.

MDU5693 is suitable for DC/DC converter and general purpose applications.

Features

  • FET1 FET2  VDS = 30V  ID = 52A VDS = 30V ID = 100A @VGS = 10V  RDS(ON) < 5.0mΩ < 8.5mΩ < 2.5mΩ @VGS = 10V < 3.2mΩ @VGS = 4.5V  100% UIL Tested  100% Rg Tested 1 2 3 4 S2 5 6 S2 S2 7 8 G2 S1/D2 4 D1 3 D1 2 D1 1 G1 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy (2) TC=25oC (Silicon Limited) TC=25oC (Package Limited) TC=70oC T.

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Datasheet Details

Part number MDU5693
Manufacturer MagnaChip
File Size 1.55 MB
Description Dual N-Channel MOSFET
Datasheet download datasheet MDU5693 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MDU5693 - Dual N-Channel Trench MOSFET 30V MDU5693 Dual Asymmetric N-channel Trench MOSFET 30V General Description The MDU5693 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU5693 is suitable for DC/DC converter and general purpose applications. Features FET1 FET2  VDS = 30V  ID = 52A VDS = 30V ID = 100A @VGS = 10V  RDS(ON) < 5.0mΩ < 8.5mΩ < 2.5mΩ @VGS = 10V < 3.2mΩ @VGS = 4.
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