Description
The MDS5601 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality.
Features
- à VDS = 30V à ID = 12.9A @VGS = 10V à RDS(ON)
< 10.5mΩ @VGS = 10V < 16.1mΩ @VGS = 4.5V à 100% UIL Tested à 100% Rg Tested
8(D17)(D16)(D2)5(D2)
4(G2) 2(G13) (S2) 1(S1)
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range
G1
TC=25oC TC=70oC TA=25oC TA=70oC TC=25oC TC=70oC TA=25oC TA=70oC
Thermal Characterist.
MDS5601-MagnaChip.pdf
