Description
The MT8332N5 uses advanced trench technology
MOSFETs to provide excellent RDS(ON) and low gate charge.The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
- N-channel
P-channel
VDS (V) = 30V
-30V
ID = 25A (VGS=10V) -25A (VGS = -10V)
G1
RDS(ON) =10 m Ω(VGS=10V) =16 m Ω (VGS=4.5V)
RDS(ON) =10.5mΩ (VGS = -10V) =17mΩ (VGS = - 4.5V)
100% Rg tested
DFN5X6-8L
D1
D2
G2
S1
S2
Top View
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
VDS
30
-30
Gate-Source Voltage
Continuous Drain Current
TC=25°C TC=100°C
VGS
±20
±20
25
-25.
MT8332N5-MTSemiconductor.pdf
