MT3116, MT3116-MOS - N-Channel Powe MOSFET

MOS-TECH

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MT3116 Datasheet Preview — This datasheet PDF includes multiple part numbers: MT3116, MT3116-MOS. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	MT3116, MT3116-MOS
Manufacturer	MOS-TECH
File Size	533.05 KB
Description	N-Channel Powe MOSFET
Datasheet	MT3116-MOS-TECH.pdf
Note	This datasheet PDF includes multiple part numbers: MT3116, MT3116-MOS. Please refer to the document for exact specifications by model.

MT3116 Product details

Description

This N-Channel MOSFET is produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DC-DC primary bridge DC-DC Synchronous rectification Hot swap D G DS TO-220 G MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Curren - Continu

Features

Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extr emely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant General.

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Published: Apr 10, 2017 |