MAPC-A3006-AS - GaN on SiC Transistor

Product Overview

MACOM

Datasheet Details

Part number	MAPC-A3006-AS
Manufacturer	MACOM
File Size	1.35 MB
Description	GaN on SiC Transistor
Datasheet	MAPC-A3006-AS Datasheet
Note	This datasheet PDF includes multiple part numbers: MAPC-A3006-AS, MAPC-A3006-AB. Please refer to the document for exact specifications by model.
Additional preview pages of the MAPC-A3006-AS datasheet.

Product details

Description

The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. Measured at CW = PSAT , defined at IGS = 0.36 mA, VDS = 28

Features

Saturated Power: 18 W.
Drain Efficiency: 70%.
Small Signal Gain: 12.5 dB.
Lead-Free Air Cavity Ceramic Package.
RoHS.
Compliant.

📁 Similar Datasheet

MAPC-104 - Non-Isolated DC/DC Converters (Datel)
MAPCGM0001 - Phase Shifter (Tyco Electronics)
MAPCGM0001-DIE - Phase Shifter (Tyco Electronics)
MAPCGM0002 - Phase Shifter (Tyco Electronics)
MAPCGM0002-DIE - Phase Shifter (Tyco Electronics)
MAPCGM0003 - S-Band Phase Shifter (Tyco Electronics)
MAPCGM0003-DIE - Phase Shifter (Tyco Electronics)
MAPCGM0004-DIE - Phase Shifter (Tyco Electronics)

Other Datasheets by MACOM

MAPC-A3006-AB - GaN on SiC Transistor
MAPC-A3005-AD - GaN on SiC Transistor
MAPC-A3005-AS - GaN on SiC Transistor
MAPC-A3007-AB - GaN on SiC Transistor
MAPC-A1103 - GaN Amplifier
MAPC-A1524 - 45V GaN Amplifier

Published: Dec 30, 2024 |