MAPC-A3006-AB Datasheet (MACOM) - GaN on SiC Transistor

MAPC-A3006-AB, GaN on SiC Transistor

The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process.

This transistor supports both defense and commercial related applications.

Offered in a thermally-enhanced flange package, the MAPC-A3006-AB/AS provides superior perform

MAPC-A3006-AB Features

* Saturated Power: 18 W

* Drain Efficiency: 70%

* Small Signal Gain: 12.5 dB

* Lead-Free Air Cavity Ceramic Package

* RoHS

* Compliant Applications

* Avionics - TACAN, DME, IFF

* Military Radio

* L, S, C-band Radar

* Electron