MAPC-A3006-AB - GaN on SiC Transistor

Product Overview

MACOM

Datasheet Details

Part number	MAPC-A3006-AB
Manufacturer	MACOM
File Size	1.35 MB
Description	GaN on SiC Transistor
Datasheet	MAPC-A3006-AB Datasheet
Additional preview pages of the MAPC-A3006-AB datasheet.

Product details

Description

The MAPC-A3006-AB/AS is a 18 W packaged, unmatched transistor utilizing a high performance, 0.15 µm GaN on SiC production process. Measured at CW = PSAT , defined at IGS = 0.36 mA, VDS = 28

Features

Saturated Power: 18 W.
Drain Efficiency: 70%.
Small Signal Gain: 12.5 dB.
Lead-Free Air Cavity Ceramic Package.
RoHS.
Compliant.

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Published: Dec 30, 2024 |