NPTB00004B, NPTB00004B-MA Datasheet (MA-COM)

NPTB00004B, NPTB00004B-MA, GaN Power Transistor

The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation.

This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package.

Ordering Information Part Number NPTB00004B NPTB00004B-SMB NPTB0000

NPTB00004B Features

* GaN on Si HEMT D-Mode Transistor

* Suitable for linear and saturated applications

* Tunable from DC - 6 GHz

* 28 V Operation

* 14.8 dB Gain @ 2.5 GHz

* 57 % Drain Efficiency @ 2.5 GHz

* 100 % RF Tested

* Industry standard SOIC plastic