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LSIC1MO170E1000 - Enhancement-mode SiC MOSFET

Features

  • Optimized for highfrequency, high-efficiency.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SiCSMiCOMSOFESTFEDTiode LSIC1MO170E1000, 1700 V, 1000 mOhm, TO-247-3L LSIC1MO170E1000 1700 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Characteristics VDS Typical RDS(ON) ID ( TC ≤ 100 °C) Value 1700 750 3.
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