LP2301LT1G 20V P-Channel Enhancement-Mode MOSFET

Leshan Radio Company

Description

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 .

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Datasheet Specifications

Part number: LP2301LT1G
Manufacturer: Leshan Radio Company
File Size: 672.10 KB
Datasheet: LP2301LT1G_LeshanRadioCompany.pdf
Description: 20V P-Channel Enhancement-Mode MOSFET

Features

* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM 1 2 SOT
* 23 (TO
* 236AB) ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device ▼ Pb-Free package is

LP2301LT1G Distributors

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LP2301LT1G 20V P-Channel Enhancement-Mode MOSFET Leshan Radio Company

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