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LP2301BLT1G P-Channel MOSFET

LP2301BLT1G Description

LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150.

LP2301BLT1G Features

* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface

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Datasheet Details

Part number
LP2301BLT1G
Manufacturer
LRC
File Size
513.16 KB
Datasheet
LP2301BLT1G-LRC.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET LRC
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