LMUN5211DW1T1G Datasheet (Leshan Radio Company) - Dual Bias ResistorTransistors

LMUN5211DW1T1G, Dual Bias ResistorTransistors

LESHAN RADIO COMPANY, LTD.

Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor.

These digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a si

LMUN5211DW1T1G Features

* 5211DW1T1G Series h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS

* LMUN5212DW1T1 10 1000 1 100 0.1 C ob CAPACITANCE (pF) 0.01 0 4 20 40 I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C 10 50 1 100 10 I