LDTDG12GPLT1G - Bias Resistor Transistor

Name: LDTDG12GPLT1G
SKU: LDTDG12GPLT1G-936848

Leshan Radio Company

The LDTDG12GPLT1G by Leshan Radio Company is a Bias Resistor Transistor. Below is the official datasheet preview.

Datasheet Details

Part number	LDTDG12GPLT1G
Manufacturer	Leshan Radio Company
File Size	319.84 KB
Description	Bias Resistor Transistor
Datasheet	LDTDG12GPLT1G-LeshanRadioCompany.pdf
Additional preview pages of the LDTDG12GPLT1G datasheet.

1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base.

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Published: Aug 25, 2015 |