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LDTDG12GPWT1G - Bias Resistor Transistor

LRC

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Datasheet Details

Part number	LDTDG12GPWT1G
Manufacturer	LRC
File Size	311.99 KB
Description	Bias Resistor Transistor
Datasheet	LDTDG12GPWT1G-LRC.pdf

LDTDG12GPWT1G Product details

Features

1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base.

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Published: Aug 18, 2015 |