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L2SC3356WT3G, L2SC3356WT1G High-Frequency Amplifier Transistor

L2SC3356WT3G Description

DATA SHEET LESHAN RADIO COMPANY, LTD..
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

L2SC3356WT3G Features

* We declare that the material of product compliance with RoHS requirements.
* Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (

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This datasheet PDF includes multiple part numbers: L2SC3356WT3G, L2SC3356WT1G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
L2SC3356WT3G, L2SC3356WT1G
Manufacturer
Leshan Radio Company
File Size
157.13 KB
Datasheet
L2SC3356WT1G-LeshanRadioCompany.pdf
Description
High-Frequency Amplifier Transistor
Note
This datasheet PDF includes multiple part numbers: L2SC3356WT3G, L2SC3356WT1G.
Please refer to the document for exact specifications by model.

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High-Frequency Amplifier Transistor Leshan Radio Company
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