L2SC3356WT1G High-Frequency Amplifier Transistor

Leshan Radio Company

Description

DATA SHEET LESHAN RADIO COMPANY, LTD..
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

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Datasheet Specifications

Part number: L2SC3356WT1G
Manufacturer: Leshan Radio Company
File Size: 157.13 KB
Datasheet: L2SC3356WT1G-LeshanRadioCompany.pdf
Description: High-Frequency Amplifier Transistor

Features

* We declare that the material of product compliance with RoHS requirements.
* Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (

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L2SC3356WT1G High-Frequency Amplifier Transistor Leshan Radio Company

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