3DG536M Datasheet (LZG) - SILICON NPN TRANSISTOR

3DG536M, SILICON NPN TRANSISTOR

2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR :。 Purpose: Small signal general purpose amplifier applications.

/Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO 3DG536M 3DG536KM 3DG536M 3DG536KM 40 55 V 30 50 V 5.0 V IC 100 mA ICP 300 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Condition Min Rating Typ Max Unit ICBO VCB=35V IE=0 1.0 μA IEBO VEB=4.0V IC=0 1.0 μA hFE VCE=6.0