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3CG953M - SILICON PNP TRANSISTOR

LZG

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Datasheet Details

Part number	3CG953M
Manufacturer	LZG
File Size	342.35 KB
Description	SILICON PNP TRANSISTOR
Datasheet	3CG953M-LZG.pdf

3CG953M Product details

Features

High total power dissipation, high hFE and high VCEO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -60 V VCEO -60 V VEBO -5.0 V IC -300 mA IB -60 mA PC 450 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Min Rating Typ ICBO VCB=-60V IE=0 IEBO VEB=-5.0V IC=0 hFE(1) VCE=-1.0V IC=-50mA 90 hFE(2) VCE=-1.0V IC=-300mA 30 VCE(sat) IC=-300mA IB=-30mA -0.15 VBE(sat) IC=-300mA IB=-30mA -0.85 VBE VCE=-6.

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Published: Jul 15, 2017 |