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3CG926 - SILICON PNP TRANSISTOR

LZG

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Datasheet Details

Part number	3CG926
Manufacturer	LZG
File Size	214.26 KB
Description	SILICON PNP TRANSISTOR
Datasheet	3CG926-LZG.pdf

3CG926 Product details

Features

Adoption of FBET,MBIT processes, low saturation voltage, large current capacity and wide ASO. /Absolute Maximum Ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -6.0 V IC -2.0 A ICP -5.0 A PC 0.75 W Tj 150 ℃ Tstg -55～150 ℃ /Electrical Characteristics(Ta=25℃) Symbol VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test Condition IC=-10μA IC=-1.0mA IE=-10μA VCB=-20V VEB=-4.0V VCE=-2.0V VCE=-2.0V IC=-1.5A IC=-1.5A VCE=-10V VCB=-10V IE=0.

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Published: Aug 10, 2017 |