3CG844 - SILICON PNP TRANSISTOR

Datasheet Details

Excellent hFE Linearity. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -55 V VCEO -55 V VEBO -5.0 V IC -100 mA IE 100 mA PC 300 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) VBE fT Cob IC=-10μA IC=-1.0mA IE=-10μA VCB=-18V VEB=-2.0V VCE=-12V IC=-10mA VCE=-12V VCE=-12V VCB=-10V IE=0 IB=0 IC=0 IE=0 IC=0 IC=-2.0mA IB=-1.0mA IC=-2.0mA IC=-2.0mA IE=0 f=1.0MHz Min -55 -55 -5.0 160.

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Published: Aug 9, 2017 |