3CG838 - SILICON PNP TRANSISTOR

Datasheet Details

High transfer ratio fT. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -20 V VEBO -5.0 V IC -30 mA PC 250 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO ICEO IEBO hFE VCE(sat) VBE fT NF Zrb Cre VCB=-10V IE=0 VCE=-20V IB=0 VEB=-5.0V IC=0 VCE=-10V IC=-1.0mA IC=-10mA IB=-1.0mA VCE=-10V IC=-1.0mA VCB=-10V IE=1.0mA f=200MHz VCB=-10V IE=1.0mA f=5.0MHz VCE=-10V IC=-1.0mA f=2.0MHz VCE=-10V IC=-1.0mA.

📁 3CG838 Similar Datasheet

3CG8550 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG8551 - TO-92L Plastic-Encapsulate Transistors (TY Semiconductor)
3CG1346 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
3CG1980 - PNP Silicon Transistor (Kodenshi)
3CG3906 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG5401 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG5610 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
3CG640 - PNP Silicon High Frequency Middle Power Transistor (Qunli Electric)

Other Datasheets by LZG

Published: Aug 9, 2017 |