3CG1981M - SILICON PNP TRANSISTOR

Datasheet Details

High hFE, complementary pair with 2SC5344S(3DG5344M). /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -35 V VCEO -30 V VEBO -5.0 V IC -800 mA PC 200 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) fT Cob IC=-500μA IC=-1.0mA IE=-50μA VCB=-35V VEB=-5.0V VCE=-1.0V IC=-500mA VCE=-5.0V VCB=-10V IE=0 IE=0 IB=0 IC=0 IE=0 IC=0 IC=-100mA IB=-20mA IC=-10mA f=1.0MHz h /FE(1) hFE(1) classi.

📁 3CG1981M Similar Datasheet

3CG1346 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
3CG3906 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG5401 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG5610 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
3CG640 - PNP Silicon High Frequency Middle Power Transistor (Qunli Electric)
3CG708 - SILICON PNP TRANSISTOR (BLUE ROCKET)
3CG751 - TO-92MOD Plastic-Encapsulate Transistors (TY Semiconductor)
3CG772 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)

Other Datasheets by LZG

Published: Jul 14, 2017 |