3CG1955 - SILICON PNP TRANSISTOR

Datasheet Details

Low saturation voltage, large collector current. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -15 V VCEO -12 V VEBO -5.0 V IC -400 mA IB -50 mA PC 100 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE VCE(sat)(1) VCE(sat)(2) VBE(sat) fT Cob Ron VCB=-15V VEB=-5.0V VCE=-2.0V IC=-10mA IC=-200mA IC=-200mA VCE=-2.0V VCB=-10V IE=0 IE=0 IC=0 IC=-10mA IB=-0.5mA IB=-10mA IB=-10mA IC=-10mA f=1.0MHz IB=-1.0mA V.

📁 3CG1955 Similar Datasheet

3CG1346 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
3CG3906 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG5401 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG5610 - Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
3CG640 - PNP Silicon High Frequency Middle Power Transistor (Qunli Electric)
3CG708 - SILICON PNP TRANSISTOR (BLUE ROCKET)
3CG751 - TO-92MOD Plastic-Encapsulate Transistors (TY Semiconductor)
3CG772 - PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)

Other Datasheets by LZG

Published: Jul 14, 2017 |