S-LSI1012LT1G - N-Channel 1.8-V (G-S) MOSFET

Datasheet Details

D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other.

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Published: Apr 18, 2016 |