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S-LSI1012XT1G - N-Channel 1.8-V (G-S) MOSFET

Features

  • D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other.

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Datasheet Details

Part number S-LSI1012XT1G
Manufacturer LRC
File Size 310.58 KB
Description N-Channel 1.8-V (G-S) MOSFET
Datasheet download datasheet S-LSI1012XT1G Datasheet

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Full PDF Text Transcription

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LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G S-LSI1012XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
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