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S-LN2308LT1G 60V N-Channel Enhancement-Mode MOSFET

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Description

LESHAN RADIO COMPANY, LTD.60V N-Channel Enhancement-Mode MOSFET .

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Datasheet Specifications

Part number
S-LN2308LT1G
Manufacturer
LRC
File Size
1.85 MB
Datasheet
S-LN2308LT1G-LRC.pdf
Description
60V N-Channel Enhancement-Mode MOSFET

Features

* RDS(ON) ≦100mΩ@VGS=10V
* RDS(ON) ≦130mΩ@VGS=4.5V
* RDS(ON) ≦200mΩ@VGS=3.3V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding
* S- Prefix for Automotive and Other Appl

Applications

* Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC Ordering Information Device LN2308LT1G S-LN2308LT1G LN2308LT3G S-LN2308LT3G

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