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S-LN2302ALT1G - 20V N-Channel Enhancement-Mode MOSFET

S-LN2302ALT1G Description

LESHAN RADIO COMPANY, LTD.20V N-Channel Enhancement-Mode MOSFET .

S-LN2302ALT1G Features

* RDS(ON)≦85mΩ@VGS=4.5V
* RDS(ON)≦115mΩ@VGS=2.5V
* RDS(ON)≦135mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability

S-LN2302ALT1G Applications

* Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS
* Power Management in Notebook
* Portable Equipment
* Load Switch
* DSC Ordering Information Device LN2302ALT1G S-LN2302ALT1G LN2302ALT3G S-LN2302ALT3G Marking 02A 02A Shippin

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Datasheet Details

Part number
S-LN2302ALT1G
Manufacturer
LRC
File Size
302.62 KB
Datasheet
S-LN2302ALT1G-LRC.pdf
Description
20V N-Channel Enhancement-Mode MOSFET

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20V N-Channel Enhancement-Mode MOSFET LRC
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