KS62024LAT2 - Single N-Channel Advanced Power MOSFET

Product Overview

Datasheet Details

Part number	KS62024LAT2
Manufacturer	Kwansemi
File Size	1.13 MB
Description	Single N-Channel Advanced Power MOSFET
Datasheet	KS62024LAT2 Datasheet
Additional preview pages of the KS62024LAT2 datasheet.

Product details

Description

Pin1 D S SS S S SS G TOLL D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RqJC ③ RqJA Thermal Resistance-Junction to Case Thermal Resistance-Junction t

Features

60V/275A, RDS (ON) =1.3mΩ(Typ. )@VGS=10V RDS (ON) =2mΩ(Typ. )@VGS=4.5V.
Excellent QG x RDS(on) product(FOM).
SGT Gen2 Technology.
100% Avalanche Tested.
Good Thermal Performance.

📁 Similar Datasheet

KS621220A7 - Single Darlington Transistor Module (Powerex Power Semiconductors)
KS621230A7 - Single Darlington Transistor Module (Powerex Power Semiconductors)
KS621K30 - Single Darlington Transistor (Powerex Power Semiconductors)
KS624530 - Single Darlington Transistor Module (Powerex Power Semiconductors)
KS624540A41 - SINGLE DARLINGTON TRANSISTOR MODULE (Powerex Power Semiconductors)
KS624550 - SINGLE DARLINGTON TRANSISTOR MODULE (Powerex Power Semiconductors)

Other Datasheets by Kwansemi

KS62036CAT - Single N-Channel Advanced Power MOSFET

Published: Jul 19, 2025 |